In the theater of modern electronic warfare, response time and thermal resilience are non-negotiable. Quest Semiconductors’ Ultra-High Voltage Silicon Carbide (SiC) Schottky Barrier Diodes are specifically engineered to meet the extreme demands of Direct Energy Weapons (DEW) and Anti-Drone (C-UAS) High-Power Microwave (HPM) systems.

The Quest Advantage in DEW Applications

• Near-Zero Switching Loss: Our 5kV and 10kV SiC SBDs eliminate the traditional “recovery charge” bottleneck, allowing for ultra-high frequency pulse modulation required for directed energy precision.
• Superior Thermal Density: Optimized for high-energy density environments, these diodes operate with 75% less power dissipation than conventional silicon, reducing the footprint of cooling sub-systems.
• Radiation Hardness: Built on a single-die SiC architecture, our modules provide enhanced security and stability in the harsh electromagnetic environments typical of aerospace and defense theaters.
• Unmatched Surge Capacity: Engineered to handle the massive current transients inherent in pulsed-power architectures, ensuring system reliability when engagement is critical.