Precision Engineering for the Next Generation of Defense
In the theater of modern electronic warfare, response time and thermal resilience are non-negotiable. Quest Semiconductors’ Ultra-High Voltage Silicon Carbide (SiC) Schottky Barrier Diodes are specifically engineered to meet the extreme demands of Direct Energy Weapons (DEW) and Anti-Drone (C-UAS) High-Power Microwave (HPM) systems.
The Quest Advantage in DEW Applications
High-efficiency SiC diodes deliver precise, reliable performance for advanced directed energy systems.
Near-Zero Switching Loss
Our 5kV and 10kV SiC SBDs eliminate the traditional "recovery charge" bottleneck, allowing for ultra-high frequency pulse modulation required for directed energy precision.
Superior Thermal Density
Optimized for high-energy density environments, these diodes operate with 75% less power dissipation than conventional silicon, reducing the footprint of cooling sub-systems.
Radiation Hardness
Built on a single-die SiC architecture, our modules provide enhanced security and stability in the harsh electromagnetic environments typical of aerospace and defense theaters.
Unmatched Surge Capacity
Engineered to handle the massive current transients inherent in pulsed-power architectures, ensuring system reliability when engagement is critical.
Strategic Technical Specification
| Parameter | 5kV 10A Defense Grade | 10kV 5A Aerospace Grade |
|---|---|---|
| Package Type | TO247 (Ceramic / Epoxy) | QSPAC (Hermetic Alloy) |
| Breakdown Voltage | 5000V | 10,000V |
| Switching Speed | Sub-25ns | Sub-35ns |
| Core Application | Pulsed Power / DEW | Grid Stability / Radar Systems |
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