SiC High voltage Mosfets packaged
| Part Number | Qualification | V ds | I ds | R DS(on) 25°C | R DS(on) 175°C | Market Cross-Ref | Package | Datasheet | AEC-Q101 | Downloads |
|---|---|---|---|---|---|---|---|---|---|---|
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QS2Q200045BD
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2000V
|
|
|
|
na
|
|
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no
|
|
|
QS50SCM330X61
|
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3300v
|
|
|
|
|
|
|
no
|
|
|
QS50SCM330U61
|
|
3300v
|
|
|
|
|
|
|
no
|
|
Quest Semi’s lineup of Silicon Carbide (SiC) High Voltage MOSFETs provides a high-performance alternative to traditional silicon components for power applications ranging from 650V to 3300V. Engineers should consider these devices for the following technical advantage.
1. Superior Efficiency and Thermal Performance
- Reduced Power Losses: These MOSFETs are unipolar devices, meaning they lack the tail currents associated with minority carriers in other high-power components, leading to significantly lower switching losses.
- High-Temperature Operation: The portfolio includes components with defined ratings up to 175°C (e.g., the QS3Q12035T9Z maintains a low 57mΩ at this temperature), allowing for more compact thermal management systems.
2. Versatile High-Voltage Range
Quest Semi specializes in high-power applications nominally above 1kV and up to 5kV. Available configurations include:
- Extreme Voltage: Options like the QS2Q20045T4 (2000V) and specialized 3300V units (QS50SCM330X61).
- Low: High-current models like the QS2Q12017T4Z offer 1200V / 118A capability with an extremely low 17mΩ resistance at 25°C.
3. Rigorous Qualification and Packaging
- Automotive and Industrial Ready: Many parts are AEC-Q101 qualified, making them suitable for EV chargers and renewable energy infrastructure.
- Flexible Form Factors: Components are available in standard packages like TO247-4, TO263-7, and TOLL, as well as Bare Die for custom module integration.
4. Cost-Effective Innovation
Quest Semi utilizes pioneered production methods designed to enhance performance while reducing production costs, helping engineers drive progress in competitive industries like aerospace, defence, and data centres.
Quest, a truly global enterprise with design centres in Spain and Australia, foundries in Scotland and a global distribution network the extends from Singapore to UK, Japan and India to the US, have made it their mission to make meaningful contributions to the betterment of life for all, and the manner in which they achieve this is through their constant technological advances in the field of Silicon carbide wafers and chips.
With many applications in what may be considered contemporary 21st century industries such as rechargeable power generation, electric vehicles, aerospace and defence the benefit of their work can be felt by all as society moves towards a greener, safer and better quality of life.
Quest has many years of experience and have pioneered many new production methods which not only result in enhanced performance but come with a reduction in production costs, driving forward progress at an unrelenting pace.
One particular area of expertise is within the development of high voltage SiC Mosfet, a high power semi-conductor device that is designed to handle high power applications, nominally above 1kV and up to 5kV. Advantages of the silicon carbide Mosfet include higher switching frequencies with lower power losses resulting in greater efficiency and unlike similar components the SiC Mosfet is unipolar which means that it does not have the tail current associated with other minority carriers and again leads to greater levels of performance.
For further information on all or any of our products, please don’t hesitate to reach out to us here at Quest.
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